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CS18LV40963Z
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€10.00
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LOW POWER 4M SRAM 512K BY 8
High Speed Super Low Power SRAM 512K Word By 8 Bit CS18LV40963 1 Rev. 2.3 Chiplus reserves the right to change product or specification without notice.
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Quantity 1 – 24 = €10.00
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Description
LOW POWER 4M SRAM 512K BY 8
High Speed Super Low Power SRAM 512K Word By 8 Bit CS18LV40963 1 Rev. 2.3 Chiplus reserves the right to change product or specification without notice.
GENERAL DESCRIPTION
The CS18LV40963 is a high performance, high speed, and super low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.50uA and maximum access time of 55/70ns in 3.0V operation. Easy memory expansion is provided by an active LOW chip enable (/CE) and active LOW output enable (/OE) and three-state output drivers.
The CS18LV40963 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The CS18LV40963 is available in JEDEC standard 32-pin sTSOP 1 -8×13.4 mm, TSOP 1 -8x20mm, TSOP 2 -400mil and SOP -450 mil packages.
FEATURES
- Low operation voltage : 2.7 ~ 3.6V
- Ultra-low power consumption
- VCC=3.0V, 3mA＠1MHz (Max.) operating current
- 0.50 uA (Typ.) CMOS standby current
- High speed access time: 55/70ns (Max.) at V CC = 3.0V.
- Automatic power down when chip is deselected.
- Three state outputs and TTL compatible
- Data retention supply voltage as low as 1.5V.
- Easy expansion with /CE and /OE options.