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CS66DT4G6Q4-9C
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€4.76
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SRAM 512K BY 8 LOW POWER
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Description
DDR3 4GB in 96Ball BGA
DDR3 Sync DRAM Features
• Functionality
– VDD/VDDQ = 1.50±0.075V
– 1.5V center-terminated push/pull I/O
– 8n-bit prefetch DDR architecture
– Differential clock inputs (CK, CK#)
– 8 internal banks
– Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
– Differential data strobe per byte of data(DQS/DQS#).
– DM masks write date at the both rising and falling edge of
the data strobe
– Programmable CAS READ latency (CL)
– Posted CAS additive latency
– Programmable CAS WRITE latency (CWL) based on tCK
– Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
– Selectable BC4 or BL8 on–the-fly (OTF)
– Self-refresh mode
– Tc of 0°C to +95°C
· 64ms, 8192 cycle refreshes at 0°C to +85°C
· 32ms, 8192 cycle refreshes at 85°C to +95°C
– Self-refresh temperature (SRT)
– Automatic self-refresh (ASR)
– Write leveling
– Multipurpose register
– Output driver calibration
• Configuration
– 64 Meg X 16 (8 Meg X 16 X 8 Banks).
– 128 Meg X 8 (16 Meg X 8 X 8 Banks)
– 256 Meg X 4 (32 Meg X 4 X 8 Banks)
• Timing – Cycle time
– 938ps @ CL = 14 (-AN)
– 1.07ns @ CL = 13 (-9M)
– 1.25ns @ CL = 11 (-8K)
– 1.50ns @ CL = 9 (-6H)
– 1.87ns @ CL = 7 (-5F)
• Operating Temperature Range -40 to 85 deg C