The CA-IS1311G-Q1 devices are high-precision reinforced isolated amplifiers and optimized for voltage sensing. Low offset and gain error and drift guarantee that measuring accuracy is maintained over the entire operating temperature range.

The CA-IS1311G-Q1 devices utilize silicon oxide (SiO2)isolation barriers and support up to 5-kVRMS galvanic isolation per UL 1577. This technology separates high- and low-voltage domain to protect lower-voltage parts from damage and provides low emissions as well as strong ant interference capability from magnetic changes. The high common-mode transient immunity (CMTI) means that theCA-IS1311G-Q1 devices transmit correct signals through isolation barriers and are suitable for automotive motor controls and drives which require high-voltage and high-power switching. The internal missing or under voltage lockout (UVLO) of high-side supply voltage detection functions contribute to fault diagnostics and system safety.

The input of CA-IS1311G-Q1 is high-impedance, making it suitable for applications where the measured signal sources have high output resistance (such as high-voltage resistive dividers). The CA-IS1311G-Q1 devices have shutdown mode, which could shut down the high-side circuit by pulling up SHTDN pin to save power.

The CA-IS1311G-Q1 devices are packaged in wide body, 8-pin SOIC packages and specified over the automotive temperature range of –40°C to 125°C.